Rotating Target Holder

Accessories

The OS Rotating Target Holder (OS-TH) allows the correct positioning of the target material during ablation.
The target rotation allows a better uniformity consumption of the target. The device can be adjusted (x, y) by external knobs to allow optimal target positioning. A DN16CF port allows to introduce processing gas in the vicinity of the target during ablation. The electrical layout of the OS-TH has been especially designed to operate in presence of plasma.
The OS-TH uses ceramic ball bearings and high voltage grounding element

Characteristics

Target Dimensions 30-60mm diameter 
Connecting Flange UHV DN40CF - UHV DN63CF
Power Transmission by magnetical rotary feedthrough
Rotating Speed (adjustable) up to 20rpm
Z Axis (adjustable) 50-100mm (optional)
Adjustable X, Y Tilting of the Target up to +/- 6°
Flange for Gas Inlet UHV DN16CF

 

Laser Thickness Monitor

Accessories

The OS Laser Thickness Monitor (OS-LTM) is designed to perform an in-situ control of thin film growth by a non destructive optical method.
LTM measures the interference pattern intensity during film growth as a function of the elapsed deposition time. The laser intensity is measured by a separate detector in order to compensate for laser intensity fluctuations.
The reflected intensity, which is modulated by interference between the top and the bottom interface of the thin film, depends on the thickness of the growing film on the substrate.
In fact, while the reflection from the substrate is constant, the variation is due to interference of the two interfaces (substrate/sample and sample/vacuum).
The signal depends on the refractive index of the sample and, in turn, on the laser wavelength (lambda) and eventually on the refractive index of the material (n).
It also depends on the laser beam incidence angle with respect to the normal of the sample plane (alpha). 

Download the LTM Demo (6.3 MB) 

Characteristics

Operation remote and in situ
Laser wavelength (nm) 532 (standard) 405, 632.8
Port Mount UHV DN40CF (standard) other mountings on demand
Sensitivity (nm) up to a few nm (for n = 2) depending on the refractive index (n)
Operating System 
for measuring Software
Windows XP or more recent desktop PC with a PCI slot*

* An RF noise shielded PC is recommended for the use in connection with a PPD System.

 

Laser Thickness Monitor

Compared to ordinary thickness monitors (i.e. quartz balance thickness monitors) the OS LTM provides the following advantages:

  • in–situ measurement system
  • real optical thickness measurement during film growth
  • installation outside the vacuum chamber
  • insensitive to electromagnetic radiation (plasma, RF noise, etc.)
  • extremely sensitive to thickness growth (depending on the refractive index; few nm for n=2).
  • can be set at any distance from the film (remote)
  • no part substitution required.

 

The features are:

  • Excellent stability due to the dual beam detection
  • Fully proprietary control system software
  • Available with different laser wavelength for refractive response optimization

 

The actual OS LTM is shown on the front page and below are the technical drawings ( Figure 2). 
The OS LTM may be fitted directly onto a CF UHV flange glass window provided by AR coating. OS may provide the window as an option.
Other mounting is possible upon demand. An optical adjustment allows perpendicular positioning against the substrate surface by means of a optical Kelvin mount.
The OS LTM can be set at any distance from the film to be measured.

OS LTM with CF UHV mount (at the bottom). The Kelvin adjusting screws are shown in blu. The laser is on the right hand side (Fig.2a).

The laser intensity detector is at the top. A side port on the detector cabinet allows to align the reflected beam on the detector.
The system may be quickly detached from the vacuum system.

Program Operation
Program Operation

 

 

Dual Beam Laser Thickness Monitor

Accessories

The OS Dual Beam Laser Thickness Monitor (OS-LTM-VIS-IR) is designed for the use with low energy gap materials (Eg < 1.82 eV). The visible 632.8 nm laser is used for optical alignment while the infrared laser (830 nm) is used for measurement.

Characteristics

Operation remote and in situ
Laser wavelength (nm) IR Laser 830 nm + alignment
laser 632.8 nm
Port Mount UHV DN40CF (standard) other mountings on demand
Usage for low Eg materials (Eg<1.82 eV)
Sensitivity (nm) up to a few nm depending on the refractive index
Operating System 
for measuring Software
Windows XP or more recent desktop PC with a PCI slot*

 

* An RF noise shielded PC (not included) is recommended for the use in connection with a PPD System.

Dual Beam LTM

PLSP Plasma Spectrometer

Accessories

The PPD deposition is characterized by a dense plasma ejected from the target. The relative intensity of the lines are a fingerprint of the deposition process. The OS Plasma Spectrometer (OS-PLSP1) is designed to take the c.w. in-situ spectrum during deposition. The OS-PLSP1 is based on a OEM CCD spectrometer with a sufficient resolution vs sensitivity for the monitoring of the plasma composition during growth. 
The proprietary software allows to monitor the time evolution of the plasma intensity and composition during growth by monitoring the relative intensities of selected emission lines. Relative intensities of chosen plasma emission lines is performed continuously. Data are automatically stored in a data logger for subsequent deposition conditions inspection. The laser wavelenght may be chosen among 405, 632.8 and 530 nm for convenience depending on the materials to be grown. The OS-PLSP1 is also suitable for plasma based growth techniques (i.e. sputtering, plasma spray, and particularly for pulsed laser deposition - PLD).

Characteristics

Operation in situ
Port Mount UHV DN40CF
Resolution 0.8nm
Spectral Range (nm) 200-800
Operating Software Windows XP or more recent

 

The image shows the PLSP typical screen window. At the top is shown the actual plasma emission spectrum of the plume generated by PPD ablation of a sinc oxide (ZnO) target.
Ionized and atomic bands of Zn are the intense lines between 460 and 500nm.
The actual relative intensity of an ionized and an atomic Zn line is shown in the bottom right hand display and the dependence of the relative intensity during the time span of the deposition is shown in the lower center graph.

RF Plasma Cleaner

Accessories

The OS Radio Frequency Plasma Cleaner (OS-RFPC) is especially designed to operate in the Load-Lock (OS-LL) unit. Samples introduced in the fast entry lock of the OS-LL may be conveniently treated by a RF Plasma in order to give a final cleaning in situ.

Characteristics

RF Power 25W
Frequency 13.56 MHz quartz controlled
Harmonic Content +30dB
Output Connector BNC female
Power Requirements 220 V ac 50-60 Hz
Dimensions (mm) Generator 230x230x130 / converter 80x50x40

 

RF Plasma Cleaner